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| savantic semiconductor product specification silicon pnp power transistors 2N6029 2n6030 description with to-3 package complement to type 2n5629 2n5630 high power dissipations applications for high voltage and high power amplifier applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2N6029 -100 v cbo collector-base voltage 2n6030 open emitter -120 v 2N6029 -100 v ceo collector-emitter voltage 2n6030 open base -120 v v ebo emitter-base voltage open collector -7 v i c collector current -16 a i cm collector current-peak -20 a i b base current -5.0 a p d total power dissipation t c =25 200 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 0.875 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2N6029 2n6030 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2N6029 -100 v ceo(sus) collector-emitter sustaining voltage 2n6030 i c =-0.2a ;i b =0 -120 v v cesat-1 collector-emitter saturation voltage i c =-10a; i b =-1a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-16a ;i b =-4a -2.0 v v besat base-emitter saturation voltage i c =-10a; i b =-1a -1.8 v v be base-emitter on voltage i c =-8a ; v ce =-2v -1.5 v i cbo collector cut-off current v cb =ratedv cbo ; i e =0 -1.0 ma 2N6029 v ce =-50v; i b =0 i ceo collector cut-off current 2n6030 v ce =-60v; i b =0 -1.0 ma v ce =ratedv cb -1.0 i cev collector cut-off current (v be(off) =1.5v) v ce =ratedv cb ; t c =150 -5.0 ma i ebo emitter cut-off current v eb =-7v; i c =0 -1.0 ma 2N6029 25 100 h fe-1 dc current gain 2n6030 i c =-8a ; v ce =-2v 20 80 h fe-2 dc current gain i c =-16a ; v ce =-2v 4 c ob output capacitance i e =0 ; v cb =-10v ;f=0.1mhz 1000 pf f t transition frequency i c =-1a ; v ce =-20v;f=0.5mhz 1.0 mhz savantic semiconductor product specification 3 silicon pnp power transistors 2N6029 2n6030 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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